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| SI7820DN New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 FEATURES ID (A) 2.6 2.5 rDS(on) (W) 0.240 @ VGS = 10 V 0.250 @ VGS = 6 V D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested APPLICATIONS D Primary Side Switch - Telecom Power Supplies - Distributed Power Architectures - Miniature Power Modules PowerPAK 1212-8 D 3.30 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 3.30 mm G Ordering Information: SI7820DN-T1--E3 S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 200 "20 2.6 2.1 10 3.2 3.5 0.6 3.8 2.0 Steady State Unit V 1.7 1.3 A 1.3 mJ 1.5 0.8 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72581 S-32411--Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W C/W 1 SI7820DN Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 200 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 2.6 A VGS = 6 V, ID = 2.5 A VDS = 15 V, ID = 2.6 A IS = 3.2 A, VGS = 0 V 10 0.200 0.210 8 0.78 1.2 0.240 0.250 2 4 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3.2 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W ID ^ 1 A, VGEN = 10 V, RG = 6 W f = 1 MHz 1 VDS = 100 V, VGS = 10 V, ID = 2.6 A 12.1 2.5 4.1 2.3 11 12 30 17 65 3.9 20 20 45 30 100 ns W 18 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10 Output Characteristics VGS = 10 thru 6 V 10 5V Transfer Characteristics 8 I D - Drain Current (A) 8 I D - Drain Current (A) 6 6 4 4 TC = 125_C 2 25_C -55_C 0 2 4V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72581 S-32411--Rev. B, 24-Nov-03 www.vishay.com 2 SI7820DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.35 Vishay Siliconix On-Resistance vs. Drain Current 800 700 Capacitance r DS(on) - On-Resistance ( W ) 0.28 VGS = 6 V 0.21 VGS = 10 V 0.14 C - Capacitance (pF) 600 500 400 300 200 100 Coss Ciss 0.07 Crss 0.00 0 2 4 6 8 10 0 0 20 40 60 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 100 V ID = 2.6 A Gate Charge 2.4 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.6 A 6 r DS(on) - On-Resistance (W) (Normalized) 8 2.0 1.6 4 1.2 2 0.8 0 0 2 4 6 8 10 12 Qg - Total Gate Charge (nC) 0.4 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.8 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.6 ID = 2.6 A 0.4 TJ = 150_C TJ = 25_C 0.2 1 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72581 S-32411--Rev. B, 24-Nov-03 www.vishay.com 3 SI7820DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 V GS(th) Variance (V) Power (W) -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -50 0 0.01 0.1 1 Time (sec) 10 100 600 10 ID = 250 mA 40 50 Single Pulse Power, Juncion-to-Ambient 30 20 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) 1000 Safe Operating Area IDM Limited rDS(on) Limited P(t) = 0.0001 10 I D - Drain Current (A) 1 ID(on) Limited TA = 25_C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 P(t) = 0.001 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc 0.1 0.01 1000 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72581 S-32411--Rev. B, 24-Nov-03 SI7820DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72581 S-32411--Rev. B, 24-Nov-03 www.vishay.com 5 |
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